Self -Phase Modulation of Silicon Nanostructure Produced by Laser Induced Etching
A diode lasers of 532nm and 473nm wavelengths were used to produce silicon nanostructure by laser induced etching process for n-type silicon wafer of orientation.The laser irradiation was carried out using different laser power density of (2, 5, 10 and 20 W/cm2 for recorder radiation time (4 min.).Optical fringes due to self-phase modulation are ob